I2304DDS-T1-GE3
Payment:
Delivery:

SI2304DDS-T1-GE3 , Vishay / Siliconix

Fabricante: Vishay / Siliconix
Número de pieza del fabricante: SI2304DDS-T1-GE3
Paquete: SOT-23-3
RoHS:
Ficha de datos:

PDF For SI2304DDS-T1-GE3

Descripción:
MOSFET 30V Vds 20V Vgs SOT-23
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 5+ $0.07852
  • 50+ $0.06381
  • 150+ $0.05642
  • 500+ $0.05091
  • 3000+ $0.04119
  • 6000+ $0.03896

In Stock: 5545

Ship Immediately
Cantidad Mínimo 5
COMPRAR
Total

$0.3926

  • Product Details
  • Shopping Guide
  • FAQs
Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 11 S
Rds On - Drain-Source Resistance 60 mOhms
Rise Time 12 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.7 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series SI2
Packaging Cut Tape or Reel
Part # Aliases SI2304DDS-GE3
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 10 V
Vgs Th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 6.7 nC
Technology Si
Id - Continuous Drain Current 3.6 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 5 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000282 oz
Tradename TrenchFET
Referencias cruzadas
739881
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=739881&N=
$
5 0.07852
50 0.06381
150 0.05642
500 0.05091
3000 0.04119
6000 0.03896