ISH101DN-T1-GE3
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SISH101DN-T1-GE3 , Vishay / Siliconix

Fabricante: Vishay / Siliconix
Número de pieza del fabricante: SISH101DN-T1-GE3
Paquete: PowerPAK-1212-8SH-8
RoHS:
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PDF For SISH101DN-T1-GE3

Descripción:
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 44 S
Rds On - Drain-Source Resistance 7.2 mOhms
Rise Time 10 ns
Fall Time 8 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 52 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case PowerPAK-1212-8SH-8
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 25 V
Vgs Th - Gate-Source Threshold Voltage - 1.2 V
Qg - Gate Charge 102 nC
Technology Si
Id - Continuous Drain Current - 35 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 38 ns
Typical Turn-On Delay Time 12 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Tradename TrenchFET; PowerPAK
Referencias cruzadas
712250
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=712250&N=
$
1 0.92906
10 0.69935
30 0.57353
100 0.43077
500 0.36722
1000 0.33867