MN24H11DS-7
Payment:
Delivery:

MN24H11DS-7 , Diodes Incorporated

Fabricante: Diodes Incorporated
Número de pieza del fabricante: DMN24H11DS-7
Paquete: SOT-23-3
RoHS:
Ficha de datos:

PDF For DMN24H11DS-7

ECAD:
Descripción:
MOSFET MOSFET BVDSS: 101V-250V
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 5+ $0.22077
  • 50+ $0.18054
  • 150+ $0.16335
  • 500+ $0.14193
  • 3000+ $0.12663
  • 6000+ $0.12087

In Stock: 2520

Ship Immediately
Cantidad Mínimo 5
COMPRAR
Total

$1.10385

  • Product Details
  • Shopping Guide
  • FAQs
Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
Rds On - Drain-Source Resistance 11 Ohms
Rise Time 4.7 ns
Fall Time 102.3 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.2 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-23-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 3.7 nC
Technology Si
Id - Continuous Drain Current 270 mA
Vds - Drain-Source Breakdown Voltage 240 V
Typical Turn-Off Delay Time 17.5 ns
Typical Turn-On Delay Time 4.8 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Referencias cruzadas
714668
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=714668&N=
$
5 0.22077
50 0.18054
150 0.16335
500 0.14193
3000 0.12663
6000 0.12087