Especificaciones técnicas del producto
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | 1 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 900 mW |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | SOT-23-6 |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Collector-Emitter Saturation Voltage | 160 mV |
| Emitter- Base Voltage VEBO | 5 V |
| Length | 3.1 mm |
| Width | 1.8 mm |
| Height | 1.3 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 215 MHz |
| Series | ZXTD09 |
| Packaging | Cut Tape or Reel |
| Brand | Diodes Incorporated |
| Configuration | Dual |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain Hfe Min | 200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V |
| DC Current Gain HFE Max | 200 at 10 mA, 2 V |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000229 oz |
