BSS314PEH6327
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BSS314PEH6327 , Infineon Technologies

Fabricante: Infineon Technologies
Número de pieza del fabricante: BSS314PEH6327
Paquete: SOT-23(SOT-23-3)
RoHS:
Ficha de datos:

PDF For BSS314PEH6327

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Descripción:
MOSFET P Trench 30V 1.5A 2V @ 6.3uA 140 mΩ @ 1.5A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 1+ $0.31311
  • 10+ $0.27495
  • 30+ $0.25785
  • 100+ $0.23814
  • 500+ $0.19737
  • 1000+ $0.19080

In Stock: 3679

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Cantidad Mínimo 1
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Total

$0.31311

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Infineon Technologies
Continuous Drain Current (Id) @ 25°C 1.5A
Power Dissipation-Max (Ta=25°C) 500mW
Rds On - Drain-Source Resistance 140mΩ @ 1.5A,10V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 2V @ 6.3uA
Vds - Drain-Source Breakdown Voltage 30V
Referencias cruzadas
4617949
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4617949&N=
$
1 0.31311
10 0.27495
30 0.25785
100 0.23814
500 0.19737
1000 0.19080