2N7002DW1T1G
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2N7002DW1T1G , Leshan Radio

Fabricante: Leshan Radio
Número de pieza del fabricante: L2N7002DW1T1G
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Descripción:
MOSFET 2 N Channel(Dual) 60V 115mA(Tc) 2V @ 250uA 7.5 Ω @ 500mA,10V SC-88 RoHS
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Leshan Radio
Continuous Drain Current (Id) @ 25°C 115mA(Tc)
Power Dissipation-Max (Ta=25°C) 380mW
Rds On - Drain-Source Resistance 7.5Ω @ 500mA,10V
Transistor Polarity 2 N Channel(Double)
Vgs - Gate-Source Voltage 2V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Referencias cruzadas
4690754
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4690754&N=
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1 0.01047