2N3507
Payment:
Delivery:

2N3507 , Microchip / Microsemi

Fabricante: Microchip / Microsemi
Número de pieza del fabricante: 2N3507
Paquete: TO-39-3
RoHS:
Ficha de datos:

PDF For 2N3507

ECAD:
Descripción:
Bipolar Transistors - BJT Power BJT
Solicitud de presupuesto In Stock: 94
Consejos cálidos: complete el formulario a continuación y nos comunicaremos con usted lo antes posible.
*Cantidad:
*Nombre:
*Email:
Teléfono:
Precio objetivo:
Remark:
Enviar Consulta
  • Product Details
  • Shopping Guide
  • FAQs
Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Microchip
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 3 A
Mounting Style Through Hole
Pd - Power Dissipation 1 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-39-3
Collector- Base Voltage VCBO 80 V
Collector- Emitter Voltage VCEO Max 50 V
Collector-Emitter Saturation Voltage 500 mV
Emitter- Base Voltage VEBO 5 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Packaging Bulk
Brand Microchip / Microsemi
Configuration Single
DC Collector/Base Gain Hfe Min 35 at 500 mA, 1 V
DC Current Gain HFE Max 175 at 500 mA, 1 V
Transistor Polarity NPN
Technology Si
Factory Pack Quantity 1
Subcategory Transistors
Referencias cruzadas
800348
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=800348&N=
$