Especificaciones técnicas del producto
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Forward Transconductance - Min | 173 S, 240 S |
| Rds On - Drain-Source Resistance | 11 mOhms |
| Rise Time | 3 ns, 5 ns |
| Fall Time | 3 ns, 5 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 2.2 W, 2.5 W |
| Product Type | MOSFET |
| Number Of Channels | 2 Channel |
| Package / Case | Power-56-8 |
| Length | 6 mm |
| Width | 5 mm |
| Height | 1.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | FDMS3660AS |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Dual |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vgs - Gate-Source Voltage | 12 V, 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.5 V, 2 V |
| Qg - Gate Charge | 21 nC, 64 nC |
| Technology | Si |
| Id - Continuous Drain Current | 13 A |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 21 ns, 38 ns |
| Typical Turn-On Delay Time | 9 ns, 12 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Tradename | Power Stage PowerTrench |
