2SB1122S-TD-E ON Semiconductor

2SB1122S-TD-E , ON Semiconductor

Fabricante:	ON Semiconductor
Número de pieza del fabricante:	2SB1122S-TD-E
Paquete:
RoHS:
Ficha de datos:	PDF For 2SB1122S-TD-E
ECAD:
Descripción:	Bipolar Transistors - BJT BIP PNP 1A 50V

Solicitud de presupuesto In Stock: 5

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Especificaciones técnicas del producto

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current	- 2 A
Mounting Style	SMD/SMT
Pd - Power Dissipation	1.3 W
Product Type	BJTs - Bipolar Transistors
Collector- Base Voltage VCBO	- 60 V
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Saturation Voltage	- 0.18 V
Emitter- Base Voltage VEBO	- 5 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product FT	150 MHz
Series	2SB1122
Packaging	Cut Tape or Reel
Brand	ON Semiconductor
Configuration	Single
Continuous Collector Current	- 1 A
DC Collector/Base Gain Hfe Min	140
DC Current Gain HFE Max	560
Transistor Polarity	PNP
Factory Pack Quantity	1000
Subcategory	Transistors
Unit Weight	0.001806 oz

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2SB1122S-TD-E , ON Semiconductor