BC847BPDW1T2G
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BC847BPDW1T2G , ON Semiconductor

Fabricante: ON Semiconductor
Número de pieza del fabricante: BC847BPDW1T2G
Paquete: SOT-363-6
RoHS:
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PDF For BC847BPDW1T2G

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Bipolar Transistors - BJT 45V 100mA DUAL
Solicitud de presupuesto In Stock: 457236
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.1 A
Mounting Style SMD/SMT
Pd - Power Dissipation 380 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-363-6
Collector- Base Voltage VCBO 50 V
Collector- Emitter Voltage VCEO Max 45 V
Collector-Emitter Saturation Voltage 0.6 V, - 0.65 V
Emitter- Base Voltage VEBO 6 V, - 5 V
Length 2 mm
Width 1.25 mm
Height 0.9 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 100 MHz
Series BC847BP
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Dual
Continuous Collector Current 0.1 A
DC Collector/Base Gain Hfe Min 200
DC Current Gain HFE Max 475
Transistor Polarity NPN, PNP
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000265 oz
Referencias cruzadas
773076
1155
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