MJ11012G
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MJ11012G , ON Semiconductor

Fabricante: ON Semiconductor
Número de pieza del fabricante: MJ11012G
Paquete: TO-204-2 (TO-3)
RoHS:
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PDF For MJ11012G

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Descripción:
Darlington Transistors 30A 60V Bipolar Power NPN
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Darlington Transistors
RoHS
Maximum DC Collector Current 30 A
Mounting Style Through Hole
Pd - Power Dissipation 200 W
Product Type Darlington Transistors
Package / Case TO-204-2 (TO-3)
Collector- Base Voltage VCBO 60 V
Collector- Emitter Voltage VCEO Max 60 V
Emitter- Base Voltage VEBO 5 V
Length 39.37 mm
Width 26.67 mm
Height 8.51 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series MJ11012
Packaging Tray
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 30 A
DC Collector/Base Gain Hfe Min 200, 1000
Transistor Polarity NPN
Factory Pack Quantity 100
Subcategory Transistors
Unit Weight 0.056438 oz
Referencias cruzadas
775494
1162
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