V1C201MZ4T1G
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V1C201MZ4T1G , ON Semiconductor

Fabricante: ON Semiconductor
Número de pieza del fabricante: NSV1C201MZ4T1G
Paquete: SOT-223-4
RoHS:
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PDF For NSV1C201MZ4T1G

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Descripción:
Bipolar Transistors - BJT 100V NPN LOW VCE(SAT) TRA
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  • Cantidad Precio unitario
  • 1+ $0.35343
  • 10+ $0.28485
  • 30+ $0.25668
  • 100+ $0.22041
  • 500+ $0.18144
  • 1000+ $0.17073

In Stock: 31701

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$0.35343

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 2 A
Mounting Style SMD/SMT
Pd - Power Dissipation 800 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-223-4
Collector- Base Voltage VCBO 140 V
Collector- Emitter Voltage VCEO Max 100 V
Collector-Emitter Saturation Voltage 0.18 V
Emitter- Base Voltage VEBO 7 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 100 MHz
Series NSS1C201MZ4
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Continuous Collector Current 2 A
DC Current Gain HFE Max 360
Transistor Polarity NPN
Factory Pack Quantity 1000
Subcategory Transistors
Unit Weight 0.003951 oz
Referencias cruzadas
763253
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=763253&N=
$
1 0.35343
10 0.28485
30 0.25668
100 0.22041
500 0.18144
1000 0.17073