Especificaciones técnicas del producto
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS |
|
| Maximum DC Collector Current | - 100 mA |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 150 mW |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Package / Case | VESM-3 |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Emitter- Base Voltage VEBO | - 5 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Packaging | Cut Tape or Reel |
| Brand | Toshiba |
| Configuration | Single |
| Continuous Collector Current | - 100 mA |
| DC Collector/Base Gain Hfe Min | 50 |
| Peak DC Collector Current | - 100 mA |
| Transistor Polarity | PNP |
| Typical Input Resistor | 1 kOhms |
| Typical Resistor Ratio | 1 |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
