SI2301CDS-T1-GE3
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SI2301CDS-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: SI2301CDS-T1-GE3
Paquete: SOT-23(SOT-23-3)
RoHS:
Ficha de datos:

PDF For SI2301CDS-T1-GE3

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Descripción:
MOSFET P Trench 20V 3.1A 1V @ 250uA 112 mΩ @ 2.8A,4.5V SOT-23(SOT-23-3) RoHS
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  • Cantidad Precio unitario
  • 10+ $0.04657
  • 50+ $0.04296
  • 200+ $0.03996
  • 600+ $0.03695
  • 1500+ $0.03455
  • 3000+ $0.03305

In Stock: 1464

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Cantidad Mínimo 10
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Total

$0.4657

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 3.1A
Power Dissipation-Max (Ta=25°C) 860mW
Rds On - Drain-Source Resistance 112mΩ @ 2.8A,4.5V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 1V @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
Referencias cruzadas
4581788
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581788&N=
$
10 0.04657
50 0.04296
200 0.03996
600 0.03695
1500 0.03455
3000 0.03305