SI9407BDY-T1-GE3
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SI9407BDY-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: SI9407BDY-T1-GE3
Paquete: SOIC-8_150mil
RoHS:
Ficha de datos:

PDF For SI9407BDY-T1-GE3

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Descripción:
MOSFET P Trench 60V 4.7A 3V @ 250uA 120 mΩ @ 3.2A,10V SOIC-8_150mil RoHS
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  • Cantidad Precio unitario
  • 5+ $0.25812
  • 50+ $0.20565
  • 150+ $0.18315
  • 500+ $0.15507
  • 2500+ $0.14256
  • 5000+ $0.13500

In Stock: 4115

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Cantidad Mínimo 5
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Total

$1.2906

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 4.7A
Power Dissipation-Max (Ta=25°C) 2.4W
Rds On - Drain-Source Resistance 120mΩ @ 3.2A,10V
Package / Case SOIC-8_150mil
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Referencias cruzadas
4614459
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4614459&N=
$
5 0.25812
50 0.20565
150 0.18315
500 0.15507
2500 0.14256
5000 0.13500