SIRA12DP-T1-GE3
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SIRA12DP-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: SIRA12DP-T1-GE3
Paquete: PowerPAK SO-8
RoHS:
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Descripción:
MOSFET N Trench 30V 25A(Tc) 2.2V @ 250uA 4.3 mΩ @ 10A,10V PowerPAK SO-8 RoHS
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  • Cantidad Precio unitario
  • 1+ $0.37145
  • 59+ $0.35176
  • 100+ $0.33206

In Stock: 80

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$0.37145

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 25A(Tc)
Power Dissipation-Max (Ta=25°C) 31W(Tc)
Rds On - Drain-Source Resistance 4.3mΩ @ 10A,10V
Package / Case PowerPAK SO-8
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 2.2V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Referencias cruzadas
4645593
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4645593&N=
$
1 0.37145
59 0.35176
100 0.33206