SIS412DN-T1-GE3
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SIS412DN-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: SIS412DN-T1-GE3
Paquete: PowerPAK 1212-8
RoHS:
Ficha de datos:

PDF For SIS412DN-T1-GE3

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Descripción:
MOSFET N Trench 30V 12A 2.5V @ 250uA 24 mΩ @ 7.8A,10V PowerPAK 1212-8 RoHS
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 5+ $0.16029
  • 50+ $0.12771
  • 150+ $0.11376
  • 500+ $0.09630
  • 3000+ $0.08856
  • 6000+ $0.08388

In Stock: 8975

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Cantidad Mínimo 5
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Total

$0.80145

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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 12A
Power Dissipation-Max (Ta=25°C) 3.2W
Rds On - Drain-Source Resistance 24mΩ @ 7.8A,10V
Package / Case PowerPAK 1212-8
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 2.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Referencias cruzadas
4604423
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4604423&N=
$
5 0.16029
50 0.12771
150 0.11376
500 0.09630
3000 0.08856
6000 0.08388