SQ2309ES-T1_GE3
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SQ2309ES-T1_GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: SQ2309ES-T1_GE3
Paquete: SOT-23
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Descripción:
MOSFET P Trench 60V 1.7A(Tc) 2.5V @ 250uA 336 mΩ @ 3.8A,10V SOT-23 RoHS
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 1.7A(Tc)
Power Dissipation-Max (Ta=25°C) 2W(Tc)
Rds On - Drain-Source Resistance 336mΩ @ 3.8A,10V
Package / Case SOT-23
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 2.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Referencias cruzadas
4595138
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4595138&N=
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1 0.21095