Si2302CDS-T1-GE3
Payment:
Delivery:

Si2302CDS-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: Si2302CDS-T1-GE3
Paquete: SOT23-3
RoHS:
Ficha de datos:

PDF For Si2302CDS-T1-GE3

ECAD:
Descripción:
MOSFET N Trench 20V 2.9A 850mV @ 250uA 57 mΩ @ 3.6A,4.5V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 20+ $0.05089
  • 200+ $0.04764
  • 500+ $0.04440
  • 1000+ $0.04116
  • 3000+ $0.03954
  • 6000+ $0.03727

In Stock: 8624

Ship Immediately
Cantidad Mínimo 20
COMPRAR
Total

$1.0178

  • Product Details
  • Shopping Guide
  • FAQs
Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.9A
Power Dissipation-Max (Ta=25°C) 710mW
Rds On - Drain-Source Resistance 57mΩ @ 3.6A,4.5V
Package / Case SOT23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 850mV @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
Referencias cruzadas
4581789
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581789&N=
$
20 0.05089
200 0.04764
500 0.04440
1000 0.04116
3000 0.03954
6000 0.03727