Si2308BDS-T1-GE3
Payment:
Delivery:

Si2308BDS-T1-GE3 , Vishay Intertech

Fabricante: Vishay Intertech
Número de pieza del fabricante: Si2308BDS-T1-GE3
Paquete: SOT-23-3
RoHS:
Ficha de datos:

PDF For Si2308BDS-T1-GE3

ECAD:
Descripción:
MOSFET N Trench 60V 2.3A 3V @ 250uA 156 mΩ @ 1.9A,10V SOT-23-3 RoHS
Tips: the prices and stock are available, please place order directly.
  • Cantidad Precio unitario
  • 10+ $0.14708
  • 50+ $0.13542
  • 200+ $0.12571
  • 600+ $0.11599
  • 1500+ $0.10822
  • 3000+ $0.10337

In Stock: 1091

Ship Immediately
Cantidad Mínimo 10
COMPRAR
Total

$1.4708

  • Product Details
  • Shopping Guide
  • FAQs
Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.3A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 156mΩ @ 1.9A,10V
Package / Case SOT-23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Referencias cruzadas
4582481
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4582481&N=
$
10 0.14708
50 0.13542
200 0.12571
600 0.11599
1500 0.10822
3000 0.10337