IHW30N60E-GE3
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SIHW30N60E-GE3 , Vishay / Siliconix

Fabricante: Vishay / Siliconix
Número de pieza del fabricante: SIHW30N60E-GE3
Paquete: TO-263-3
RoHS:
Ficha de datos:

PDF For SIHW30N60E-GE3

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Descripción:
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Solicitud de presupuesto In Stock: 480
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 125 mOhms
Rise Time 32 ns
Fall Time 36 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 250 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-263-3
Length 15.87 mm
Width 5.31 mm
Height 20.82 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series E
Packaging Bulk
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Vgs - Gate-Source Voltage 30 V
Vgs Th - Gate-Source Threshold Voltage 2.8 V
Qg - Gate Charge 85 nC
Technology Si
Id - Continuous Drain Current 29 A
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-Off Delay Time 63 ns
Typical Turn-On Delay Time 19 ns
Factory Pack Quantity 480
Subcategory MOSFETs
Referencias cruzadas
733691
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=733691&N=
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