ISH116DN-T1-GE3
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ISH116DN-T1-GE3 , Vishay / Siliconix

Fabricante: Vishay / Siliconix
Número de pieza del fabricante: SISH116DN-T1-GE3
Paquete: PowerPAK-1212-8SH
RoHS:
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Descripción:
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
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Especificaciones técnicas del producto
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 68 S
Rds On - Drain-Source Resistance 7.8 mOhms
Rise Time 10 ns
Fall Time 10 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 3.8 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case PowerPAK-1212-8SH
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series SIS
Packaging Cut Tape or Reel
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel TrenchFET Power MOSFET
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 23 nC
Technology Si
Id - Continuous Drain Current 16.4 A
Vds - Drain-Source Breakdown Voltage 40 V
Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 10 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Tradename TrenchFET, PowerPAK
Referencias cruzadas
712070
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=712070&N=
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